PART |
Description |
Maker |
A426316B A426316BS A426316BS-30 A426316BS-30L A426 |
64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMIC Technology
|
A416316B A416316BS-30 A416316BS-30L A416316BS-35 A |
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE 64K的16的CMOS动态RAM的快速页面模
|
AMIC Technology Corporation AMIC Technology, Corp. http://
|
8203 |
64K DYNAMIC RAM CONTROLLER
|
Intel Corp.
|
IS62C6416A IS61C6416AL IS64C6416AL IS64C6416AL-15K |
64K x 16 HIGH-SPEED CMOS STATIC RAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc Integrated Silicon Solution...
|
CY7C09289 CY7C09289-9AI CY7C09289-9AC CY7C09389-9A |
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 18 DUAL-PORT SRAM, 25 ns, PQFP100 32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP100 32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 25 ns, PQFP100 32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 15 ns, PQFP100 32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 18 DUAL-PORT SRAM, 20 ns, PQFP100 32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 18 ns, PQFP100 DIODE SCHOTTKY SINGLE 75V 200mW 0.45V-vf 150mA-IFM 10mA-IF 5uA-IR SOD-123 3K/REEL 32K X 18 DUAL-PORT SRAM, 18 ns, PQFP100 0.1UF 50V 10% 0805 X7R CERAMIC CAPACITOR 32K X 18 DUAL-PORT SRAM, 20 ns, PQFP100 32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 18 ns, PQFP100 (CY7C09279 - CY7C09289) 32K/64K X 16/18 Synchronous Dual Port Static RAM True dual-ported memory cells which allow simultaneous access of the same memory location
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
T221160A-35S T221160A-30J T221160A T221160A-30S T2 |
64K x 16 DYNAMIC RAM FAST PAGE MODE 64K的16动态RAM快速页面模
|
TM Technology, Inc. TMT[Taiwan Memory Technology]
|
KM4164B KM4164B-10 KM4164B-12 KM4164B-15 |
64K X 1 BIT DYNAMIC RAM WITH PAGE MODE 64K的1位动态内存页面模
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. Samsung Electronic
|
K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
A42L8316 A42L8316S A42L8316S-30 A42L8316V-30U A42L |
40ns; self refresh 256K x 16 CMOS dynamic RAM with EDO page moge 256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMICC[AMIC Technology]
|
CY7C0430V 7C0430V CY7C0430V-133BGI CY7C0430V-133BG |
3.3V 64K x 18 Synchronous QuadPort⑩ Static RAM 3.3V 64K X 18 SYNCHRONOUS QUADPORT⒙ STATIC RAM From old datasheet system 3.3V 64K x 18Synchronous QuadPort?Static RAM
|
CYPRESS[Cypress Semiconductor]
|
KM616V1002B |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作)) 64K的16位高速CMOS静态RAM.3V的工作)4K的16位高速的CMOS静态随机存储器.3V的工作)
|
Samsung Semiconductor Co., Ltd.
|